A Simple DC to 110 GHz MMIC True Time Delay Line
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Abstract
A simple miniaturized ultra-wideband true time delay line (TTD) is demonstrated using Indium Phosphide (InP) MMIC technology. An unprecedented bandwidth from close to dc to beyond 110 GHz is measured. The TTD has around 200 ps delay, a maximum insertion loss of only ∼ 4.5 dB at 110 GHz, and better than 15 dB return loss across the majority of the band. This configuration significantly reduces the chip size, weight and cost. It demonstrates that wideband large time delay line is viable for planar IC implementation. To the authors' knowledge, this is the widest bandwidth ever reported for MMIC true time delay lines with relatively large time delay and compact size.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">A Simple DC to 110 GHz MMIC True Time Delay Line</title><author><name>XING LAN</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>The authors are with the Northrop Grumman Corporation, Redondo Beach</s1><s2>CA 90278</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Californie</region></placeName></affiliation></author><author><name sortKey="Kintis, Mark" uniqKey="Kintis M">Mark Kintis</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>The authors are with the Northrop Grumman Corporation, Redondo Beach</s1><s2>CA 90278</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Californie</region></placeName></affiliation></author><author><name sortKey="Hansen, Chad" uniqKey="Hansen C">Chad Hansen</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>The authors are with the Northrop Grumman Corporation, Redondo Beach</s1><s2>CA 90278</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Californie</region></placeName></affiliation></author><author><name sortKey="Chan, Wesley" uniqKey="Chan W">Wesley Chan</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>The authors are with the Northrop Grumman Corporation, Redondo Beach</s1><s2>CA 90278</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Californie</region></placeName></affiliation></author><author><name sortKey="Tseng, Gilbert" uniqKey="Tseng G">Gilbert Tseng</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>The authors are with the Northrop Grumman Corporation, Redondo Beach</s1><s2>CA 90278</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Californie</region></placeName></affiliation></author><author><name sortKey="Tan, May" uniqKey="Tan M">May Tan</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>The authors are with the Northrop Grumman Corporation, Redondo Beach</s1><s2>CA 90278</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Californie</region></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">12-0299969</idno><date when="2012">2012</date><idno type="stanalyst">PASCAL 12-0299969 INIST</idno><idno type="RBID">Pascal:12-0299969</idno><idno type="wicri:Area/Main/Corpus">001A90</idno><idno type="wicri:Area/Main/Repository">002102</idno></publicationStmt><seriesStmt><idno type="ISSN">1531-1309</idno><title level="j" type="abbreviated">IEEE microw. wirel. compon. lett.</title><title level="j" type="main">IEEE microwave and wireless components letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Antenna array</term><term>Compact design</term><term>Delay line</term><term>Delay time</term><term>Implementation</term><term>Insertion loss</term><term>MMIC</term><term>Microwave integrated circuits</term><term>Miniaturization</term><term>Monolithic integrated circuit</term><term>Planar technology</term><term>Return loss</term><term>Ultra wide band</term><term>Wide band</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Circuit MMIC</term><term>Temps retard</term><term>Ligne retard</term><term>Miniaturisation</term><term>Ultra large bande</term><term>Perte insertion</term><term>Perte de retour</term><term>Large bande</term><term>Technologie planaire</term><term>Implémentation</term><term>Conception compacte</term><term>Antenne réseau</term><term>Circuit intégré monolithique</term><term>Circuit intégré hyperfréquence</term><term>Réseau d'antennes</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">A simple miniaturized ultra-wideband true time delay line (TTD) is demonstrated using Indium Phosphide (InP) MMIC technology. An unprecedented bandwidth from close to dc to beyond 110 GHz is measured. The TTD has around 200 ps delay, a maximum insertion loss of only ∼ 4.5 dB at 110 GHz, and better than 15 dB return loss across the majority of the band. This configuration significantly reduces the chip size, weight and cost. It demonstrates that wideband large time delay line is viable for planar IC implementation. To the authors' knowledge, this is the widest bandwidth ever reported for MMIC true time delay lines with relatively large time delay and compact size.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1531-1309</s0></fA01><fA03 i2="1"><s0>IEEE microw. wirel. compon. lett.</s0></fA03><fA05><s2>22</s2></fA05><fA06><s2>7</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>A Simple DC to 110 GHz MMIC True Time Delay Line</s1></fA08><fA11 i1="01" i2="1"><s1>XING LAN</s1></fA11><fA11 i1="02" i2="1"><s1>KINTIS (Mark)</s1></fA11><fA11 i1="03" i2="1"><s1>HANSEN (Chad)</s1></fA11><fA11 i1="04" i2="1"><s1>CHAN (Wesley)</s1></fA11><fA11 i1="05" i2="1"><s1>TSENG (Gilbert)</s1></fA11><fA11 i1="06" i2="1"><s1>TAN (May)</s1></fA11><fA14 i1="01"><s1>The authors are with the Northrop Grumman Corporation, Redondo Beach</s1><s2>CA 90278</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA20><s1>369-371</s1></fA20><fA21><s1>2012</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>22393</s2><s5>354000504031620130</s5></fA43><fA44><s0>0000</s0><s1>© 2012 INIST-CNRS. 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